(China (Mainland))
Product Summary
The SI1012X-T1-GE3 is an N-Channel 1.8 V (G-S) MOSFET.
Parametrics
SI1012X-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 20 V; (2)Gate-Source Voltage VGS: ± 6 V; (3)Continuous Drain Current (TJ = 150℃)b TA = 25℃ ID: 500 mA; (4)Pulsed Drain Current IDM: 1000 mA; (5)Continuous Source Current (Diode Conduction) IS: 250 mA; (6)Maximum Power Dissipation for SC-75: 150 mW; (7)Maximum Power Dissipationb for SC-89: 250 mW; (8)Operating Junction and Storage Temperature Range TJ, Tstg: -55 to 150℃; (9)Gate-Source ESD Rating (HBM, Method 3015) ESD: 2000 V.
Features
SI1012X-T1-GE3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFET: 1.8 V Rated; (3)Gate-Source ESD Protected: 2000 V; (4)High-Side Switching; (5)Low On-Resistance: 0.7 Ω; (6)Low Threshold: 0.8 V (typ.); (7)Fast Switching Speed: 10 ns; (8)Compliant to RoHS Directive 2002/95/EC.
Diagrams
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 SI1012X-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V |
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