Product Summary

The SI1013X-T1-GE3 is a P-Channel 1.8-V (G-S) MOSFET.

Parametrics

SI1013X-T1-GE3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 20 V; (2)Gate-Source Voltage VGS: ± 6 V; (3)Continuous Drain Current (TJ = 150℃) ID: - 350 mA; (4)Pulsed Drain Current IDM: - 1000 mA; (5)Continuous Source Current (diode conduction) IS: - 250 mA; (6)Maximum Power Dissipation for SC-75: 150 mW; (7)Maximum Power Dissipation for SC-89: 250 mW; (8)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150℃; (9)Gate-Source ESD Rating (HBM, Method 3015) ESD: 2000 V.

Features

SI1013X-T1-GE3 features: (1)Halogen-free Option Available; (2)High-Side Switching; (3)Low On-Resistance: 1.2 Ω; (4)Low Threshold: 0.8 V (Typ.); (5)Fast Switching Speed: 14 ns; (6)1.8 V Operation; (7)TrenchFET Power MOSFETs; (8)2000 V ESD Protection.

Diagrams

SI1013X-T1-GE3 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
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