Product Summary

The SI4403BDY-T1-E3 is a P-Channel 1.8-V (G-S) MOSFET.

Parametrics

SI4403BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: - 20 V; (2)Gate-Source Voltage VGS: ± 8 V; (3)Continuous Drain Current (TJ = 150℃) a ID: - 7.3 A; (4)Pulsed Drain Current IDM: - 30 A; (5)Continuous Source Current (Diode Conduction) a IS: - 1.3 A; (6)Maximum Power Dissipation a PD: 1.35 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150℃.

Features

SI4403BDY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFETs; (3)Compliant to RoHS Directive 2002/95/EC.

Diagrams

SI4403BDY-T1-E3 pin configuration

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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SI4403BDY-T1-E3
SI4403BDY-T1-E3

Vishay/Siliconix

MOSFET 20V 9A 2.5W

Data Sheet

0-1: $0.60
1-25: $0.46
25-50: $0.43
50-100: $0.41
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
Si4401BDY
Si4401BDY

Other


Data Sheet

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SI4401BDY-T1-E3
SI4401BDY-T1-E3

Vishay/Siliconix

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Data Sheet

0-1: $1.06
1-25: $0.84
25-50: $0.79
50-100: $0.76
SI4401BDY-T1-GE3
SI4401BDY-T1-GE3

Vishay/Siliconix

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Data Sheet

0-1: $1.06
1-10: $0.84
10-50: $0.80
50-100: $0.76
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SI4401DDY-T1-GE3

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Data Sheet

0-1: $0.58
1-25: $0.44
25-100: $0.39
100-250: $0.34
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Data Sheet

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SI4401DY-E3

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Data Sheet

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