(China (Mainland))
Product Summary
The SUD19N20-90-E3 is an N-Channel 200-V (D-S) 175℃ MOSFET. It is applicated for Primary Side Switch.
Parametrics
SUD19N20-90-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 200 V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Continuous Drain Current (TJ = 175℃) TC = 25℃ ID: 19 A; (4)Pulsed Drain Current IDM: 40 A; (5)Continuous Source Current (Diode Conduction) IS: 19 A; (6)Avalanche Current IAS: 19 A; (7)Single Pulse Avalanche Energy L = 0.1 mH EAS: 18 mJ; (8)Maximum Power Dissipation PD: 3 W; (9)Operating Junction and Storage Temperature Range TJ, Tstg - 55℃ to 175℃.
Features
SUD19N20-90-E3 features: (1)TrenchFET Power MOSFET; (2)175℃ Junction Temperature; (3)PWM Optimized; (4)100 % Rg Tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 SUD19N20-90-E3 |
Vishay/Siliconix |
MOSFET 200V 17.5A 100W |
Data Sheet |
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