Product Summary

The IRFS4410ZPBF is a HEXFET Power MOSFET.

Parametrics

IRFS4410ZPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 97 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V (Silicon Limited): 69 A; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V (Package Limited): 75 A; (4)IDM Pulsed Drain Current: 390 A; (5)PD @TC = 25℃ Maximum Power Dissipation: 230 W; (6)Linear Derating Factor: 1.5 W/℃; (7)VGS Gate-to-Source Voltage: ± 20 V; (8)dv/dt Peak Diode Recovery: 16 V/ns; (9)TJ TSTG Operating Junction and Storage Temperature Range: -55 to +175℃; (10)Soldering Temperature, for 10 seconds (1.6mm from case): 300℃; (11)EAS (Thermally limited) Single Pulse Avalanche Energy: 242 mJ.

Features

IRFS4410ZPBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.

Diagrams

IRFS4410ZPBF package dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRFS4410ZPBF
IRFS4410ZPBF

International Rectifier

MOSFET

Data Sheet

0-1: $2.22
1-25: $1.51
25-100: $1.13
100-250: $1.08
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
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Data Sheet

0-1: $1.11
1-10: $1.05
10-100: $0.95
100-250: $0.89
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Data Sheet

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International Rectifier

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Data Sheet

0-1: $1.94
1-25: $1.15
25-100: $0.91
100-250: $0.90
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Data Sheet

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Data Sheet

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Data Sheet

0-1: $2.04
1-25: $1.39
25-100: $1.04
100-250: $0.99