Product Summary
The SI4850EY-T1-E3 is an N-Channel Reduced Qg, Fast Switching MOSFET.
Parametrics
SI4850EY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage VDS: 60 V; (2)Gate-Source Voltage VGS: ± 20 V; (3)Continuous Drain Current (TJ = 175℃) ID: 6.0 A; (4)Pulsed Drain Current IDM: 40 A; (5)Avalanche Current IAS: 15 A; (6)Single Pulse Avalanche Energy EAS: 11 mJ; (7)Maximum Power Dissipationa PD: 1.7 W; (8)Operating Junction and Storage Temperature Range TJ, Tstg: - 55℃ to 175℃.
Features
SI4850EY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Definition; (2)TrenchFET Power MOSFETs; (3)175℃ Maximum Junction Temperature; (4)Compliant to RoHS Directive 2002/95/EC.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SI4850EY-T1-E3 |
Vishay/Siliconix |
MOSFET 60 Volt 8.5 Amp 3.3W |
Data Sheet |
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Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
Si4800 |
Other |
Data Sheet |
Negotiable |
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SI4800,518 |
MOSFET N-CH 30V 9A SOT96-1 |
Data Sheet |
Negotiable |
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SI4800BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
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SI4800BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V |
Data Sheet |
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SI4800DY |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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SI4800DY-E3 |
Vishay/Siliconix |
MOSFET 30V 9A 2.5W |
Data Sheet |
Negotiable |
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